HMAA8GL7CPR4N

• 288 pin Load Reduced DDR4 DRAM Dual In-LIne Memory Modules • Buffer performance by LRDIMM presenting less load to system • Compatible with RDIMM systems with appropriate BIOS change • Power Supply: VDD=1.2V (1.14V to 1.26V) • VDDQ = 1.2V (1.14V to 1.26V) • VPP = 2.5V (2.375V to 2.75V) • VDDSPD=2.25V to 2.75V • Functionality and operations comply with the DDR4 SDRAM/3DS SDRAM datasheet • 16 internal banks • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available • Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133 • Bi-Directional Differential Data Strobe • 8 bit pre-fetch • Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) • Supports ECC error correction and detection • On-Die Termination (ODT) • Temperature sensor with integrated SPD • This product is in compliance with the RoHS directive.